| 摘要 |
SOLUTION: A method for forming a resist pattern of the present invention includes: a step (1) of forming a coating film (I) on a substrate, the coating film formed from a composition comprising at least a polymer (A) having at least one group selected from a phenolic hydroxyl group and a carboxyl group and a quinone diazide compound (B); a step (2) of forming a coating film (II) of a negative resist composition on the coating film (I); a step (3) of selectively exposing the coating film (II) along a pattern and developing the exposed coating film (II); and a step (4) of removing by etching a part of the coating film (I) corresponding to an opening formed by the exposure and development in the coating film (II).EFFECT: By the method for forming a resist pattern of the present invention, a resist pattern in a suitable profile can be obtained while preventing an undercut profile of the resist pattern or the like.SELECTED DRAWING: Figure 2 |
