| 摘要 |
PURPOSE:To make smaller the forward voltage in the titled device as well as to simplify the manufacturing process of the device by ready-forming previously a first diffusion region having the same conductivity type as that of a semiconductor substrate on the whole surface of the semiconductor substrate and the likes. CONSTITUTION:A first diffusion region 4 having the same conductivity type as that of a semiconductor substrate 1 is formed on the whole surface of one conductivity type semiconductor substrate 1 and one conductivity type second diffusion regions 6 are formed in the surface of the first diffusion region 4 on the outer sides more than prearranged guard regions 8. Then, the guard regions 8 having the other conductivity type are formed on the inner side more than the second diffusion regions 6 and a Zener diode is formed of the guard regions 8 and the first diffusion region 4. Thereafter, a Schottky electrode 10 which forms a Schottky barrier with the surface, which is surrounded with the above guard regions 8, of the semiconductor substrate 1 is adhered. Thereby, the impurity concentration in the whole surface of the semiconductor substrate 1 becomes higher because the first diffusion region 4 having the same conductivity type as that of the semiconductor substrate 1 is previously ready-formed on the whole surface of the one conductivity type semiconductor substrate 1, the series resistance component between a cathode and an anode becomes smaller and the forward voltage can be made smaller.
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