| 摘要 |
PURPOSE:In liquid-phase epitaxial method, to lessen temperature difference in the vicinity of melt liquid level in both vertical and horizontal direction, by setting a reflecting member in the vicinity of melt at growing optical crystal from the melt. CONSTITUTION:In crystal growth method such as liquid-phase epitaxial method, etc., a reflecting member 2 is set in the vicinity of liquid level of melt 6. Then optical crystal is grown from the melt 6. Consequently, temperature difference in the vicinity of melt in both vertical and horizontal directions is lessened and crack of crystal and release of epitaxial film in crystal growth are reduced. |
