发明名称 MOS INTEGRATED CIRCUIT
摘要 PURPOSE:To contrive a stable action by setting the low potential of an external power source to a substrate bias, boosting the low potential in a chip through a power source/voltage conversion circuit and supplying it as the source power source voltage of an internal circuit. CONSTITUTION:A VccExt directly inputs as the internal drain power source voltage 110 of the internal circuit 109 in the chip, is boosted to a 2V by the power source voltage conversion circuit 115 in the chip, and inputted to the internal circuit 109 as a VssInt. 116. The VssExt. 107 outside the chip is connected to a package seat 101 on the conductive surface, and acts as the substrate potential VBB 117. Since a Vssext. with a high power source capacity is used as a VBB, the malfunction is considerably improved, and at the time of discharging a bit line the VccExt and VssExt with high power source capacities are directly resistance-divided. Thus a Vref is stabilized, and the power source voltage conversion circuit including the substrate bias is only of one system, whereby the internal circuit 109 including an address buffer circuit main body can be resistant to noise.
申请公布号 JPS62208496(A) 申请公布日期 1987.09.12
申请号 JP19860050423 申请日期 1986.03.10
申请人 TOSHIBA CORP;TOSHIBA MICRO COMPUT ENG CORP 发明人 SAKUI YASUSHI;IGAWA TATSUO
分类号 G11C11/407;G11C11/34;G11C11/401;G11C11/409 主分类号 G11C11/407
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