| 摘要 |
PURPOSE:To increase the reverse withstanding voltage of a Schottky junction by forming a metallic end surface being in contact with a high-concentration active layer of the GaAs-metallic Schottky junction in the [011'] direction. CONSTITUTION:An end surface AA' being in contact with a high-concentration active layer 31 of a Schottky electrode 28 is shaped in parallel with the [011'] axial direction of a GaAs substrate. Accordingly, since the high-concentration active layer 31 is formed adjacent to the Schottky electrode 28, series resistance can be reduced, and the end surface AA' being in contact with the high- concentration active layer 31 of the Schottky electrode 28 is shaped in parallel with the [011'] crystal axis of GaAs, thus acquiring reverse withstanding voltage of 5V or more regardless of the size of a Schottky metal.
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