发明名称 Dot matrix display panel with a thin film transistor and method of manufacturing same
摘要 A dot matrix display panel with a thin film transistor and the manufacturing method therefor, the panel being so constructed that a gate insulating layer and a semiconductor layer are provided as one laminated film substantially equal in the size thereto on an insulating substrate having a gate electrode and in a region of the substrate except for the peripheral portion thereof, and a source electrode and a drain electrode come into contact with the semiconductor layer in a region covering the gate electrode and gate insulating layer so as to constitute a thin film transistor array substrate, so that a display medium is sandwiched between the array substrate and the substrate having a transparent electrode.
申请公布号 US4704002(A) 申请公布日期 1987.11.03
申请号 US19860946609 申请日期 1986.12.29
申请人 MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. 发明人 KIKUCHI, ISAKO;OTA, ISAO;TAKEDA, MAMORU;KIYOKAWA, SEIJI
分类号 G02F1/1368;(IPC1-7):G02F1/13;H01L29/78 主分类号 G02F1/1368
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