发明名称 |
Dot matrix display panel with a thin film transistor and method of manufacturing same |
摘要 |
A dot matrix display panel with a thin film transistor and the manufacturing method therefor, the panel being so constructed that a gate insulating layer and a semiconductor layer are provided as one laminated film substantially equal in the size thereto on an insulating substrate having a gate electrode and in a region of the substrate except for the peripheral portion thereof, and a source electrode and a drain electrode come into contact with the semiconductor layer in a region covering the gate electrode and gate insulating layer so as to constitute a thin film transistor array substrate, so that a display medium is sandwiched between the array substrate and the substrate having a transparent electrode.
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申请公布号 |
US4704002(A) |
申请公布日期 |
1987.11.03 |
申请号 |
US19860946609 |
申请日期 |
1986.12.29 |
申请人 |
MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. |
发明人 |
KIKUCHI, ISAKO;OTA, ISAO;TAKEDA, MAMORU;KIYOKAWA, SEIJI |
分类号 |
G02F1/1368;(IPC1-7):G02F1/13;H01L29/78 |
主分类号 |
G02F1/1368 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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