| 摘要 |
In an apparatus for the Czochralsky growth of compound single crystals wherein a single crystal growing portion is provided in a sealed vessel whose opening part is sealed by a B2O3 melt and which contains therein an atmosphere of a volatile element of the compound, at least the inner wall the sealed vessel is made of a material having a melting point of at least 1400 DEG C., selected from Group III-V compounds and oxides of Group III or V elements. Compound single crystals such as GaAs, GaP, InAs, InP, ZnS, ZnSe and CdS obtained by the use of this apparatus are free from contamination with silicon. |
