| 摘要 |
PURPOSE:To preferably selectively deposit a W without abnormal Si etching by cleaning the surface of a substrate by optical etching in case of selectively depositing a metal on the substrate by a CVD method. CONSTITUTION:After a thermal oxide film 2 is deposited on an Si substrate 1, the film 2 is etched to form a contact hole 3. At this time, a natural oxide film 4 is formed in the hole 3. Then, an etching gas 6 flows while emitting an Hg lamp light 3 to this sample. The film 4 in the hole 3 is removed by the optical etching. When W is selectively deposited on the sample, a W film 7 is deposited with preferable selectivity. When the W film is desired to be thickly deposited, the optical etching is again executed to remove the nucleus of the W on the film 2, a W film 8 is again selectively deposited. Then, the W film of total thickness of 1mum can be formed.
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