| 摘要 |
PURPOSE:To easily deposit a flat film and a film of desired pattern by patterning in advance hydrogenide, oxide or fluoride with volatile material. CONSTITUTION:An Si oxide film 11 is formed on an Si substrate 10, and an aluminum electrode 12 and a carbon film 13 are further formed. Then, a resist pattern 14 is formed on the film 13, the films 13, 12 are plasma etched and patterned. Then, an SiO2 film is deposited as an Si thin film 15. This deposition is performed by an optical CVD method for emitting a low pressure mercury lamp light. The light is absorbed to an N2O to generate atoms, molecules or ions, such as O, O2. These atoms are reacted with SiH4 near the surface of the substrate 10 to deposit a film 15. However, the atoms, molecules or ions fed to the vicinity of the film 13 are reacted with the film 13 to generate CO, CO2. The CO, CO2 are scattered as gases to block the deposition of the film 15 on the film 13, thereby obtaining the film 15 in which its step is alleviated.
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