| 摘要 |
PURPOSE:To improve the resolution of a fine pattern, and to enhance the precision of drawing by exposing the edge section of a large pattern and other patterns first and exposing a residual section in the large pattern and a small pattern. CONSTITUTION:Beams of electrons (e<->) are generated from the inner surface of a window 13 by beams from an LED projected to the outer surface of the window 13 consisting of AgCs, and the upper section of a sample 18 is irradiated by beams of electrons and exposed to a predetermined pattern. When the inside of a region of 20mum one side includes a large pattern and a small pattern and configuration is required, an edge section shown by an oblique line in a pattern I and a pattern III are exposed at a first step, and a pattern 11 is not exposed. The inside (oblique line) of the pattern I and the pattern II are exposed. Consequently, 'a blur' by the Coulomb's repulsive force of beams of the pattern l is eliminated, and, 'blurs' by a proximity effect between the patterns I and II and the patterns II and III are also removed. Acoordingly, processes are divided so as not to simultaneously expose approaching patterns, thus improving accuracy.
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