发明名称 |
Photochemical reaction apparatus |
摘要 |
An apparatus for photochemically processing a silicon wafer placed in a reactive gas by an illuminating energy for etching or film forming purposes. The apparatus includes a reaction chamber in which the silicon wafer is positioned and the reaction chamber is filled with a gas which is photochemically reactive to the illuminating energy. An opening is formed through the wall of the reaction chamber and the silicon wafer is positioned within the chamber apart from the opening. Condensing means for condensing the light energy from the illuminating energy radiating means at around the opening and directing the same into the chamber is arranged outside the chamber.
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申请公布号 |
US4715318(A) |
申请公布日期 |
1987.12.29 |
申请号 |
US19860819801 |
申请日期 |
1986.01.16 |
申请人 |
NIPPON KOGAKU K.K. |
发明人 |
KAMEYAMA, MASAOMI;MATSUMOTO, KOICHI |
分类号 |
C23C16/48;(IPC1-7):H01L21/205;H01L21/263 |
主分类号 |
C23C16/48 |
代理机构 |
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代理人 |
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