| 摘要 |
PURPOSE:To obtain an electrode which has excellent ohmic properties and bonding properties by a method wherein, after an Ni layer is formed on the surface of a substrate or on the surface of a layer formed on the substrate and subjected to a heat treatment, a Cr layer with the thickness of not less than 400 Angstrom is formed and then an Au layer with the thickness of 0.5-2 mum is formed and the heat treatment is performed again. CONSTITUTION:An Ni layer 2, a Cr layer 3 and an Au layer 4 are laminated on a substrate made of N-type SiC in this order to form an electrode. The Ni layer 2 is formed as a thin film with the thickness of 0.1-1 mum by vacuum evaporation or sputtering. After the Ni layer 2 is formed, a heat treatment is performed in the atmosphere of inert gas such as Ar or H2 gas or in a vacuum at 800-1200 deg.C for 1-30 minutes. Then the Cr layer 3 is formed on the surface of the Ni layer 2 to the thickness of not less than 400 Angstrom by a method such as vacuum evaporation or sputtering. After the Cr layer 3 is formed, the Au layer 4 with the thickness of 0.5-2 mum is formed on the surface of the Cr layer 3 and then the heat treatment is performed in the atmosphere of inert gas such as Ar or H2 gas or in a vacuum at 200-500 deg.C for 5-30 minutes. |
