| 摘要 |
<p>PURPOSE:To remove peeling, and to improve reliability by coating the upper section of an impurity conductive region and a compound semiconductor substrate with a first metallic film to form a first layer and coating the upper section of a layer insulating film and the upper section of the first layer with a second metallic film. CONSTITUTION:An AuGe-Au film 8 is shaped in source-drain regions and a bonding pad region, thus forming source-drain electrodes on the FET side, then shaping a first layer metallic film on the bonding pad side. When alloying treatment is executed, an ohmic contact is formed between the AuGe-Au film 8 and a high-concentration n-type GaAs region 6 on the FET side, and the AuGe-Au film 8 and a GaAs substrate 4 are alloyed and a contact having strong adhesion is shaped on the bonding pad side. An SiO2 film 9 as a layer insulating film is formed onto the whole surface, and patterned. A WSi or TiN film 12 is shaped onto the whole surface, an Au evaporated film 13 is formed, a second layer wiring pattern is shaped, an Au plating film is formed, and Au or WSi in sections except wirings is remvoed.</p> |
