| 发明名称 |
RESIN GLASS FILLED DEEP TRENCH ISOLATION |
| 摘要 |
<p>A method of forming trench/dielectric by coating trench walls and substrate surface with MgO followed by filling the trenches with a resin glass. The MgO layer is used for RIE planarization etchback of the resin glass to level of the trenches.</p> |
| 申请公布号 |
CA1232371(A) |
申请公布日期 |
1988.02.02 |
| 申请号 |
CA19860504663 |
申请日期 |
1986.03.20 |
| 申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
CHIU, GEORGE T.;MO, ROY A.;WONG, MAN-CHONG |
| 分类号 |
H01L21/76;H01L21/3105;H01L21/312;H01L21/762;(IPC1-7):H01L29/30;H01L21/461 |
主分类号 |
H01L21/76 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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