发明名称 MANUFACTURE OF SEMICONDUCTOR DEVICE
摘要 PURPOSE:To improve the heat resistance stress and the moisture resistance of a semiconductor element by a method wherein a thermo-setting synthetic resin highly filled with silica powder is used as a sealing resin while a metallic mold shape filling resin smoothly is adopted to perform a first time formation. CONSTITUTION:When a semiconductor device sealed with thermosetting synthetic resin is formed by two transfer molding processes, first time sealed formation is performed by positioning a semiconductor element 8 on the central part of a cavity 5; closing a metallic mold 2; and filling the cavity 5 with epoxy resin highly filled with silica powder. The resin runs from a runner 12 through a gate 13 and a pass 15 to the cavity 5 to encircle the semiconductor element 8 and Au wires 10 to be sealed. The pass 15 formed gradually wider toward the cavity 5 ensures a smooth flow of resin from a gate 13 to the cavity 5 regardless of the lower fluidity thereof restricting the deformation of Au wires 10 to the minimum while restraining any bubbling from occurring. Through these procedures, the applicable epoxy resin highly filled with the silica powder can provide a sealed resin layer (sealing formed body) 32 with excellent heat resistant stress and moisture resistance.
申请公布号 JPS6351647(A) 申请公布日期 1988.03.04
申请号 JP19860195923 申请日期 1986.08.21
申请人 FUJITSU LTD;FUJITSU AUTOM KK 发明人 KAWAHARA TOSHIMI;HAYASHI HIROAKI;SONO RIKURO;SUGIURA RIKIO;MURAKI KAZUHIRO;HIRASAWA KENICHI
分类号 H01L21/56;H01L23/29;H01L23/31 主分类号 H01L21/56
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