| 摘要 |
PURPOSE:To prevent the mutual mixing of ingredients, impurities, etc. in each semiconductor layer, and to manufacture a semiconductor device having excellent characteristics by forming semiconductor thin-films having different conductivity types or semiconductor thin-films having different compositions or composition ratios in each independent reaction chamber. CONSTITUTION:A plurality of decompression reaction chambers 4, 6, 8, 10 with reactive semiconductor supply means 25-40 and exhaust means 21-24 are connected through sluice valves 5, 7, 9, thus constituting a vapor phase reactor. Only one conductivity type semiconductor film or a semiconductor film having the composition or composition ratio of one semiconductor component is shaped in respective reaction chamber 4, 6, 8, 10, and the number of said reaction chambers 4, 6, 8, 10 can be varied in response to the structure of a manufactured semiconductor device while the sluice valves 5, 7, 9 partitioning said each reaction chamber 4, 6, 8, 10 are closed completely and perfectly independent reaction space is formed. |
