| 摘要 |
PURPOSE:To accurately and simply obtain a variation in a thickness of an active layer of a semiconductor laser by electrically controlling the thickness of the active layer of the laser by utilizing the piezoelectric property of a crystal having a piezoelectric property. CONSTITUTION:The thickness of the active layer 3 of a semiconductor laser 2 is electrically controlled by utilizing the piezoelectric property of a crystal 5 having a piezoelectric property to modulate the frequency of the laser 2. For example, when a double hetero junction type AlxGa1-xAs semiconductor is used as the laser 2 and LiNbO3 is used as a piezoelectric crystal 5 to form a semiconductor laser element 1, the crystal 5 is integrated with the laser 2 by epitaxial growth or bonding. The element 1 is interposed between a pair of holding jigs 6, and the thickness of the crystal 5 is controlled to maintain a predetermined interval at the jigs 6 to modulate the frequency of the laser oscillation light. |
