| 摘要 |
PURPOSE:To decrease a unit-cell occupying area, by forming the drain lead out electrode of a P-or N-channel MOS transistor on a thin insulating film, and constituting another P-or N-channel MOS transistor so that the insulating film is operated as a gate insulating film and the lead-out electrode is operated as a gate electrode. CONSTITUTION:A drain lead-out electrode 23 of a PMOS TP1 is made to form a unitary body with the gate electrode of a PMOS TP2. A drain lead-out electrode 24 of an NMOS TN1 is made to form a unitary body with the gate electrode of an NMOS TN2. Namely, the PMOS TP2 and the NMOS TN1 are embedded in the lower parts of the TP1 and the TN1 in this structure. The constituting elements are made to form unitary bodies. Thus the occupying areas of the transistors TP1, TP2, TN1 and TN2 are reduced, and the unit cell occupying area of a static type RAM can be reduced. |
