| 摘要 |
PURPOSE:To realize a low-noise, low-stigmatism semiconductor laser by a method wherein the main laser guiding mechanism is gain-oriented and an independently controllable positive refraction waveguide mechanism is provided in the vicinity of the laser emission end face. CONSTITUTION:On an n-type GaAs substrate 1, second and third double heterostructure (DH) layers 5, 6, and 7 are built, sandwiching stripe-geometry first DH layers 2, 3, and 4. fn the vicinity of a laser emission end face on the surface of a p-type buried layer 7, there is a pair of p-type electrodes 10, sandwiching a p-type stripe electrode 9. The second and third DH layers just under the p-type electrodes 10 are converted into high-resistance element-isolating regions 11 in the periphery through exposure to a converged Ga ion beam. A forward current is applied across the P-type stripe electrode 9 and an n-type electrode 8 for triggering off a laser oscillation and, simultaneously, a backward voltage is applied across the p-type electrodes 10 and the n-type electrode 8 for the control of the refraction factor of a multiple quantum well layer 6.
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