| 摘要 |
PURPOSE:To make a pause time longer and reduce the scattering of the pause time by a method wherein impurity concentration in a drain region coupled with a capacitor is rendered lower than that in a source region. CONSTITUTION:An LDD transistor is so constructed that impurity concentration is lower in a drain region 6 coupled with a data storage capacitor than in a source region 7. This results in a lowered impurity concentration at the edge of an insulating film isolating elements in the vicinity of the capacitor, which brings about a reduction in the leak into a substrate. In this way, a pause time may be made longer and scattering is reduced in the pause time. |
