发明名称 THIN FILM DEPOSITION PROCESS
摘要 <p>A thin film process for depositing a metal oxide layer onto a substrate body, the process comprising the steps of taking a metal organic compound in vapour form, the compound being capable of absorbing light in the wavelength range of 240 to 400 nanometres, heating the substrate to a temperature below the pyrolytic decomposition temperature of the compound in the presence of the vapour, directing light towards the substrate to cause a photochemical fragmentation of said vapour molecules, the reaction resulting in a deposition of the required oxide on said substrate. The metal organic compound may be a metal alkoxy substitued beta-diketonate such as aluminium diisopropoxide acetyl acetonate.</p>
申请公布号 WO1988007759(A1) 申请公布日期 1988.10.06
申请号 GB1988000228 申请日期 1988.03.25
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