Low-loss circuitry of gate-controlled semi-conductors

摘要

For low-loss circuitry of gate-controlled semi-conductors (T1, T2, T5, T6) in the case of an invertor which is supplied from a DC voltage source (Ud) provided with a energy-storage capacitor (Cd), inductor coils (L11, L21) which are connected in series with the semiconductors (T1, T2, T5, T6) and limit the current rise are bridged by the series circuit consisting of a demagnetising diode (D11, D21) and the primary winding of the first transformer (W11, W21). A circuitry capacitor (C1, C2, C5, C6) which limits the voltage rise and is in series with a circuitry diode (B1, B2, B5, B6) is connected in parallel with each semi-conductor (T1, T2, T5, T6). The junction points between the circuitry capacitor and the circuitry diode of two adjacent semi-conductors (T1, T2) are connected, by means of the series connection of a discharge diode (D31, D41), to the primary winding of a second transformer (W12, W22). The secondary windings of the first and second transformers (W11, W21; W12, W22) are connected in series with first and second energy-recovery diodes respectively (D5, D7; D6, D8) which are polarised in the direction of the positive pole of the energy-storage capacitor (Cd) and are connected in parallel with said energy-storage capacitor (Cd) so that the circuitry energy of the circuitry capacitors (C1, C2, C5, C6) is fed back into the energy-storage capacitor (Cd), in the same way as the circuitry energy which is stored in the inductor coils (L11, L21). As a result of the common use of transformers and transformer windings ... Original abstract incomplete. <IMAGE>