发明名称 |
INTEGRED CONTROL CIRCUIT APPLIED AS LARGE POWER MOSFET AND ELECTRIC SOURCE SWITCH |
摘要 |
A lateral conduction high power MOSFET chip with integrated control circuits in disclosed for high-side switching applications. A first surface field reduction region disposed between drain and source regions extends from the chip surface and into its body and has a charge density of about 1x1012 ions/cm2. A second surface field reduction region extends below the first region and the source and drain regions and has a charge density of from about 1.5x1012 to 2.0x1012 ions/cm2. A substrate extends below the second region and is isolated from both drain and source regions to enable the use of the device as a high-side switch. |
申请公布号 |
JPS63310175(A) |
申请公布日期 |
1988.12.19 |
申请号 |
JP19880130045 |
申请日期 |
1988.05.27 |
申请人 |
INTERNATL RECTIFIER CORP |
发明人 |
DANIERU EMU KINZAA |
分类号 |
G05F3/24;H01L21/336;H01L21/8238;H01L27/088;H01L27/092;H01L29/06;H01L29/78 |
主分类号 |
G05F3/24 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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