发明名称 METHOD FOR MANUFACTURING TETRAVALENT CHROMIUM ION ADDED YTTRIUM ALUMINUM GARNET SINGLE CRYSTAL FIBER
摘要 PROBLEM TO BE SOLVED: To provide a method for manufacturing a tetravalent chromium ion added yttrium aluminum garnet single crystal fiber, capable of incorporating a chromium oxide in a molten portion of a yttrium aluminum garnet single crystal in a solid phase without vaporizing.SOLUTION: A calcium oxide (CaO) vapor deposition layer 12 used as an electric charge compensation body, a chromium oxide (CrO) vapor deposition layer 13 and a yttrium oxide (YO) vapor deposition layer 14 are formed in a substantially uniform thickness on the surface of a column 11 (an outer diameter of 240 μm) of a yttrium aluminum garnet (YAlO) single crystal without including an additive element. The upper end of a preform is heated and melted by a COlaser beam 18 in the oxygen environment. In this case, since the melting point of yttrium oxide in the outermost layer is 2410°C, chromium ions in the chromium oxide vapor deposition layer are not changed from a trivalent until reaching a melting part 15, and chromium oxide is not vaporized.SELECTED DRAWING: Figure 1
申请公布号 JP2016199441(A) 申请公布日期 2016.12.01
申请号 JP20150082087 申请日期 2015.04.13
申请人 NIPPON TELEGR & TELEPH CORP <NTT> 发明人 ISHIBASHI SHIGEO
分类号 C30B29/28;G02B6/02 主分类号 C30B29/28
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