| 摘要 |
<p>This method involves the formation of a precursor substrate surface which includes islands (40) of insulating material, each of which is encircled by a crystallization seeding area (170) of substantially single crystal semiconductor material. The boundaries of the islands are defined with a first pattern delineating device, e.g., a mask, which, in terms of the pattern it produces, is substantially identical to a second pattern delineating device. The latter device is a component of pattern delineating apparatus used in forming an IC, e.g., an IC mask set, the component being used to delineate the device regions of the IC. A layer of non-single crystal semiconductor material (45) is formed on the precursor substrate surface (30), and crystallized with little or no displacement of the islands. The pattern delineating apparatus is then used to form an IC in the crystallized material.</p> |
