| 摘要 |
PCT No. PCT/FR85/00208 Sec. 371 Date Mar. 18, 1986 Sec. 102(e) Date Mar. 18, 1986 PCT Filed Jul. 29, 1985 PCT Pub. No. WO86/01336 PCT Pub. Date Feb. 27, 1986.A process for the production of a MIS-type integrated circuit is disclosed. In order to form an integrated circuit having reciprocally electrically insulated active components in which the gates of the components do not extend above the electrical insulations used for the reciprocal insulation of the components, the process consists of covering a semiconductor substrate (30) with a first layer (32) of insulating material, depositing on the first layer (32) of insulating material a second layer including a semiconductor or conductor material in which will be formed the gates (34a) of the active components, formulation of the field oxide (46a) of the circuit used for electrically insulating the active components from one another, production of the gates (34a) of the active components, production of the sources and drains of the components by a doping of the substrate, the doping having a reverse conductivity to that of the substrate (3), formation of insulating edges (58a) on the edges of the gates (34a) of the components, production of electrical contact holes of the circuit, and production of connections of the circuit. |
