| 摘要 |
PURPOSE:To prevent an impurity from a transparent conductive film layer of the basement of a semiconductor layer from being mixed at the time of manufacture of a semiconductor layer and to prevent an impurity from being diffused when not in use for a long period of time by forming a thin-film having a amorphous or microcrystalline structure containing carbon or carbon as its main ingredient and by laminating an amorphous or microcrystalline semiconductor layer thereon. CONSTITUTION:A blue plate glass is used as a substrate 1. A tin oxide 2 is accumulated on the surface thereof using normal pressure CVD method. Next, a thin film 3 having an amorphous or microcrystalline structure containing carbon or carbon as its main ingredient is accumulated by glow discharge decomposition using a mixed gas of methane, hydrogen, and diborane. On the surface of this film is accumulated a p-type microcrystalline SiC by an ECR plasma CVD method. After this, an intrinsic a-SiH film is laminated in another room by a glow discharge decomposition of a SiH4 gas. Furthermore, when Si glow discharge decomposition is performed, an n-type fine-crystal Si is obtained. Finally, laminating an Al electrode 5 by deposition completes a photoelectric element. |
