PROCESS FOR PRODUCING INTEGRATED SEMICONDUCTOR DEVICE STRUCTURES WITH A MESA CONFIGURATION AND STRUCTURE OF SAID TYPE

摘要

The process starts with a flat semiconductor substrate (9, 13) on a portion of which at least a first layer (17) of material is provided. A stud (27) is formed at the edge of layer (17) e.g. by blanket depositing a second layer (27) and etching it anisotropically. Layer (17) is removed. The semi-conductor substrate (9, 13) is etched anisotropically using stud (27) as etch mask. The protrusion (30) form is electrically contacted to its opposing vertical sidewall after - if necessary - diffusing impurities through these sidewalls to a predetermined depth.
The structure of the type as produced by that process has a mesa configuration with protrusions (30) integral with, and extending outward from a semiconductor pedestal and being surrounded with an oxide isolation (39) recessed in that pedestal. The protrusions (30) include for example PNP and NPN-lateral transistors.