Semiconductor device

摘要

A semiconductor device and an operating method of the same are disclosed. The semiconductor device includes a substrate, a source region, a drain region, a gate structure, a first lightly-doped region, and a first isolation region. The source region and the drain region are formed in the substrate. The gate structure is formed on the substrate and between the source region and the drain region. The first lightly-doped region is formed below the source region. The first isolation region is formed in the substrate and surrounding the source region, the drain region, and the first lightly-doped region. The source region and the drain region have a first-polarity, and the first lightly-doped region and the first isolation region have a second-polarity.

主权项

1. A semiconductor device, comprising:
a substrate; a source region and a drain region formed in the substrate; a gate structure formed on the substrate and between the source region and the drain region; a first lightly-doped region formed below the source region, wherein a top surface of the first lightly-doped region is below a bottom surface of the source region; and a first isolation region formed in the substrate and surrounding the source region, the drain region, and the first lightly-doped region; wherein the source region and the drain region have a first-polarity, and the first lightly-doped region and the first isolation region have a second-polarity.