发明名称 EPITAXIAL DEPOSITION
摘要 <p>A method of manufacture of thin film devices involves the sputtering of an epitaxial barrier layer (11) of a metallic oxide such as magnesia on to which a further epitaxial thin film (12) is deposited. The substrate is preferably alumina and the thin film may be a high temperature superconductive compound of yttrium, barium, copper and oxygen.</p>
申请公布号 WO1989010634(A1) 申请公布日期 1989.11.02
申请号 GB1989000430 申请日期 1989.04.21
申请人 发明人
分类号 主分类号
代理机构 代理人
主权项
地址