发明名称 |
PROCESS FOR FORMING DIFFUSION REGIONS IN A SEMICONDUCTOR SUBSTRATE |
摘要 |
A method for forming channel stops in the sidewalls of a trench isolation structure formed in a semiconductor substrate. In one form, anistrophically etched substrate trenches are conformally covered by doped glass, the doped glass is anisotropically etched to retain vertical, sidewall segments of doped glass, and the substrate is annealed to form shallow diffusions in the trench sidewalls. The depth of the sidewall diffusion is related to differences in the dopant segregation coefficients between the glass and substrate materials. |
申请公布号 |
DE3574077(D1) |
申请公布日期 |
1989.12.07 |
申请号 |
DE19853574077 |
申请日期 |
1985.11.25 |
申请人 |
NCR CORPORATION |
发明人 |
COLLINS, GEORGE, JOSEPH;METZ, WERNER, ADAM, JR. |
分类号 |
H01L21/76;H01L21/225;H01L21/762;H01L29/94;(IPC1-7):H01L21/225 |
主分类号 |
H01L21/76 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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