发明名称 |
DEVICE FOR FORMING THIN COMPOUND FILM |
摘要 |
Device comprises a vacuum chamber (1A) contg. a substrate (2); an internal vessel (12) within the chamber having an opening opposite the substrate; gas jet nozzles (13,14) arranged inside (IA) connected to external reactive gas sources (6,7) for jetting the gases to the substrate via the opening; and electron beam source (s) (17) for irradiating the gases after their emission from the jet nozzles. Pref. an accelerator (19) is also provided in (IA) for the irradiated reactive gases.
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申请公布号 |
KR900005118(B1) |
申请公布日期 |
1990.07.19 |
申请号 |
KR19870006373 |
申请日期 |
1987.06.23 |
申请人 |
MITSUBISHI ELECTRIC CO., LTD. |
发明人 |
ITO HIROKI;INA DERUO |
分类号 |
C23C16/452;C23C16/48;C23G5/00;(IPC1-7):H01L21/18 |
主分类号 |
C23C16/452 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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