| 摘要 |
Provided are a polishing composition for chemical mechanical polishing, a method of preparing the polishing composition, and a chemical mechanical polishing method using the polishing composition. The polishing composition which is a water-based polishing composition for planarizing a metal compound thin film including two or more metal elements includes nano-diamond particles as a polishing material and poly(sodium 4-styrenesulfonate) as a dispersion stabilizer for the nano-diamond particles in the polishing composition. Since the nano-diamond particles in the polishing composition have hydrophobic surfaces and poly(sodium 4-styrenesulfonate) effectively stabilizes the nano-diamond particles to prevent the nano-diamond particles from aggregating, excellent polishing characteristics for the metal compound thin film may be obtained due to the nano-diamond particles which have a nano size, high hardness, and excellent dispersibility. |
| 主权项 |
1. A water-based polishing slurry composition for planarizing a chalcogenide material or a chalcogenide glass material thin film, the polishing slurry composition comprising:
nano-diamond particles as a polishing material; and poly(sodium 4-styrenesulfonate) as a dispersion stabilizer for the nano-diamond particles in the polishing slurry composition, wherein an average particle size of the nano-diamond particles ranges from 10 nm to 120 nm, a content of the nano-diamond particles in the polishing slurry composition ranges from 0.01 weight % to 10 weight %, and a content of the poly(sodium 4-styrenesulfonate) in the polishing slurry composition ranges from 0.03 weight % to 2 weight %, and wherein the chalcogenide material is selected from the group consisting of GeSbTe, GeSe, GeTeAs, GeSnTe, SeSnTe, GaSeTe, GeTeSnAu, SeSb2, InSe, GeTe, BiSeSb, PdTeGeSn, InSeTiCo, InSbTe, In3SbTe2, GeTeSb2, GeTe3Sb, GeSbTePd, AgInSbTe, CuSe, and a combination thereof. |
