Diblock copolymer, preparation method thereof, and method of forming nano pattern using the same

摘要

The present invention relates to a diblock copolymer that may facilitate formation of a finer nano pattern, and be used for manufacture of an electronic device including a nano pattern or a bio sensor, and the like, a method for preparing the same, and a method for forming a nano pattern using the same,;The diblock copolymer comprises a hard segment including at least one specific acrylamide-based repeat unit, and a soft segment including at least one (meth)acrylate-based repeat unit.

主权项

1. A method for forming a nano pattern comprising:
coating a solution of a diblock copolymer comprising a hard segment and a soft segment on a substrate to form a thin film; solvent-annealing the coated thin film to form a polymer thin film on a substrate on which a film to be patterned is formed; irradiating UV to the polymer thin film to remove soft segments; and conducting reactive ion etching of a film to be patterned using the polymer thin film from which the soft segments are removed as a mask; wherein the hard segment comprises at least one repeat unit of the following Chemical Formula 1, and the soft segment comprises at least one (meth)acrylate-based repeat unit of the following Chemical Formula 2, and wherein the soft segments are regularly arranged in cylindrical forms on hard segments, and the cylindrical forms are regularly arranged in a square shape, by the solvent-annealing: in the above Chemical Formula 1, n is an integer of from 5 to 600, R is hydrogen or a methyl group, R is X, X is —Z—R″, Z is a C6-20 arylene group, R″ is a C10-20 linear or branched hydrocarbon, and in the above Chemical Formula 2, m is an integer of from 30 to 1000, R1 is a methyl group, and R2 is a methyl group.