| 摘要 |
<p>PURPOSE:To obtain a larger display which does not bring on deterioration of a display quality caused by a write shortage of a signal voltage by forming the whole gate bus line from a metal without increasing a mask pattern exceeding three pieces. CONSTITUTION:On an insulating substrate, a picture element electrode 6b consisting of a transparent conductive film, an island-like gate electrode 2b and a drain bus line 5b are formed. Also, in each intersection part of a thin film field effect type transistor 10 forming part and a gate bus line 3a, and a drain bus line 5b, an island-like insulating layer and a laminated film of a semiconductor layer are formed, and moreover, by a metallic film, drain and source electrodes 14 of the thin film field effect type transistor 10 and the gate bus line 3a are formed. In such a way, by three pieces of masks to be used, the gate bus line can be converted to a low resistance, and a larger display which does not bring on deterioration of a display shortage generated by a write shortage of a signal voltage caused by a propagation delay of a signal pulse can be obtained.</p> |
