| 摘要 |
An MOS field effect transistor controlled thyristor is formed with a large number of mutually identical thyristor modules, each one having a base region (3) and an emitter region (4) contiguous to the base region, which between them form an emitter junction. Each module has an MOS transistor (7, 8, 9, 10), integrated with the thyristor module, for controllable shunting of the emitter junction for turn-off of the thyristor module. The MOS transistor is of depletion type and its control electrode (10) is connected, by way of a current-limiting device (R) separate for the module, to a turn-off control connection (SS) common to all the modules of the thyristor. |
