TRENCH GATE COMPLIMENTARY METAL OXIDE SEMICONDUCTOR TRANSISTOR

摘要

A complimentary trench gate metal-oxide semiconductor transistor is disclosed along with a resulting product. The process for forming the transistor comprises forming a trench within the semiconductor substrate (59), wherein the semiconductor substrate is doped to a first conductivity type. A layer doped to a second conductivity type is applied about the surface of the trench. An insulating layer (61) is then formed within the trench upon said first layer. A region of gate material (57) is formed within the trench upon said insulating layer (61). Source and drain regions (53, 55) are formed by doping first and second regions adjacent the trench to the first conductivity type.