发明名称 METHOD FOR INSPECTING RESIST PATTERN
摘要 PURPOSE:To accurately measure a tapered angle by providing a mark for aligning an axis near a resist pattern, inclining a substrate corresponding to the side angle of a cross sectional shape and adjusting and operating a scanning type electron microscope based on the mark for aligning the axis. CONSTITUTION:The marks for aligning the axis M and M' are plotted near both sides of the extension of the resist pattern 7 at a production stage by an electron beam. As soon as one side face 13 of the pattern 7 is confirmed once on the screen of a CRT 16 while adjusting an inclination axis, it is made to just disappear by rotating the axis reversely to before. By reading the display of a rotation angle at this time, the tapered angle against the one side face 13 of the pattern 7 is easily measured. Furthermore, the other side face 14 is measured by adjusting the inclination axis in an opposite direction. Namely, the production stage is completed while controlling size by inspecting the cross sectional shape of the pattern 7 and measuring the tapered angle, thereby forming the pattern whose finished degree is high.
申请公布号 JPH02249908(A) 申请公布日期 1990.10.05
申请号 JP19890072091 申请日期 1989.03.24
申请人 DAINIPPON PRINTING CO LTD 发明人 NAKAMURA HIROYUKI
分类号 G01B9/04;G01B11/24;G01B15/00;G01N21/88;G01N21/956;H01L21/027;H01L21/30 主分类号 G01B9/04
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