RF amplifier module and methods of manufacture thereof

摘要

An amplifier module includes a module substrate. Conductive interconnect structures and an amplifier device are coupled to a top surface of the module substrate. The interconnect structures partially cover the module substrate top surface to define conductor-less areas at the top surface. The amplifier device includes a semiconductor substrate, a transistor, a conductive feature coupled to a bottom surface of the semiconductor substrate and to at least one of the interconnect structures, and a filter circuit electrically coupled to the transistor. The conductive feature only partially covers the semiconductor substrate bottom surface to define a conductor-less region that spans a portion of the bottom surface. The conductor-less region is aligned with at least one of the conductor-less areas at the module substrate top surface. The filter circuit includes a passive component formed over a portion of the semiconductor substrate top surface that is directly opposite the conductor-less region.

主权项

1. An amplifier module comprising:
a module substrate having a top module substrate surface and a bottom module substrate surface; a plurality of first conductive interconnect structures coupled to the top module substrate surface, wherein the plurality of first conductive interconnect structures only partially cover the top module substrate surface to define a plurality of conductor-less areas at the top module substrate surface; and an amplifier device coupled to the module substrate top surface, wherein the amplifier device includes:
a semiconductor substrate having a top semiconductor substrate surface and a bottom semiconductor substrate surface,a transistor,a first conductive feature coupled to the bottom semiconductor substrate surface and to at least one of the first conductive interconnect structures, wherein the first conductive feature only partially covers the bottom semiconductor substrate surface to define a first conductor-less region that spans a first portion of the bottom semiconductor substrate surface, and wherein the first conductor-less region is aligned with at least one of the plurality of conductor-less areas at the top module substrate surface, anda first filter circuit electrically coupled to the transistor, wherein the first filter circuit includes a first passive component formed over a portion of the top semiconductor substrate surface that is directly opposite the first conductor-less region.