| 摘要 |
<p>The invention relates to a semiconductor device comprising a radiation-sensitive element (A..D). The radiation-sensitive element comprises a transistor (T) having an emitter region (6), a base region (4) and a collector region (2), and further a radiation-sensitive region (7) having a rectifying junction. Due to the presence of the transistor (T), such an element (A..D) can supply a considerably larger output signal than a photodiode. On the contrary, however, the first-mentioned element (A..D) has a considerable lower detection speed than a photodiode due to the parasitic capacitance of the rectifying junction. The invention obviates this disadvantage in that according to the invention the radiation-sensitive region (7) has at least a first subregion (71) and a second subregion (72) and the transistor (T) is subdivided into two subtransistors (T1, T2), whose base regions (4) are separately connected to the subregions (71, 72). The collector regions (2) and the emitter regions (6) of the subtransistors (T1, T2) are interconnected.</p> |
