Thin film electroluminescent display - consisting of luminescent layer between dielectric multilayers in which one multilayer is desired to improve voltage dependent properties

摘要

In a thin film ELD having a luminescent layer (5) between upper (26,27,29) and lower (23,24) dielectric multilayers, at least one of the multilayers is designed to improve the voltage-dependent properties of the display. Pref. at least one of the multilayers has a SiN:H film directly adjacent the luminescent layer (3), the film being produced by plasma-(VI) and having max. 1.2 x 10 power22 N-H bonds per cu.cm., and/or the upper multi-layer has an amorphous Si film (27) embedded between two dielectric films (26,29). ADVANTAGE - The SiN:H film limits the time-dependent variation of emission peak voltage to max. 30V and allow the ELD to be mass produced since plasma-CVD is used instead of sputtering.