| 摘要 |
A resist comprising of a mixture of either poly 4,4,6,6-tetramethyl-4,6-disila-heptyne or poly 4,4,7,7-tetramethyl-4,7-disila-2-octyne as a host polymer and an additional reagent having at least a radical reactive on the double bond of the host polymer, and a patterning process using this resist, particularly as a top patterning resist in a bilayer system.
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