发明名称 MANUFACTURE OF SEMICONDUCTOR DEVICE
摘要 PURPOSE:To effectively remove electricity of a substrate-housing jig and of a semiconductor substrate housed in the jig by a method wherein the substrate is housed in the substrate-housing jig and a film of a volatile organic solvent is formed on the surface of the substrate-housing jig in a state that the substrate-housing jig has been grounded. CONSTITUTION:Substrates 4 are inserted into a jig 1 from an upperpart opening part 1a and are held in the jig so as to be separated from each other. A holding member 3 is grounded; the jig 1 is held on a reservoir 2 of a volatile organic solvent such as IPA or the like in a container 2a which has been grounded in the same manner. Then, the holding member 3 is lowered; the jig 1 is immersed completely in the reservoir 2 of the IPA together with the semiconductor substrates 4 housed in the jig 1. Then, the jig 1 is pulled up from the reservoir 2 at a proper speed and is dried. During this process, an IPA film is formed on the surface of the jig 1; an electric charge is conducted immediately to the conductive holding member 3 through the film and is made to escape to a ground. Also an electric charge generated in the semiconductor substrates 4 housed in the jig 1 is made to flow to the IPA film with which the jig 1 is covered at a contact point with the jig 1, and is made to escape to the ground through the holding member 3.
申请公布号 JPH03129719(A) 申请公布日期 1991.06.03
申请号 JP19900126130 申请日期 1990.05.16
申请人 FUJITSU LTD;FUJITSU VLSI LTD 发明人 UNO MASAAKI;KOBAYASHI MASANORI;NAKAJIMA KAZUJI
分类号 H01L21/02;H01L21/673 主分类号 H01L21/02
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