| 摘要 |
PURPOSE:To reduce a defect such as a pinhole, etc., by etching a base material with ClF3 gas, removing etching residue, and depositing a film on the base material. CONSTITUTION:An etching process 104 for etching a base material with ClF3 gas, an etching residue removing process 105 for the etching base material, and a film deposition process 106 for depositing a film on the base material after the process 105 are provided. Since the surface of the base material is etched with the ClF3 gas, the amount of dust adhered to the surface of the base material can be reduced. A clean surface of the base material can be obtained by conducting the etching process 104 with the ClF3 gas before the process 106 and the process 105 for removing the residue generated by etching. Thus, a deposited film of high quality having less defects such as less pinholes, etc., is stably obtained. |
