| 摘要 |
<p>PURPOSE:To obtain a T-type gate electrode with a low gate resistance by eliminating a T-type dummy gate using etching, performing recess etching of a substrate layer of the remaining resist layer which is exposed to a mask, and then by forming a gate electrode at the recess-etched region by the lift-off method. CONSTITUTION:An ohmic metal 6 which becomes a source/drain electrode is formed by the lift-off method utilizing a resist layer 5 covering a T-type dummy gate 4 which is subjected to patterning in an inverse taper structure. Then, the resist layer 5 is eliminated, a resist 7 is coated over the entire surface to a thickness covering the dummy gate 4, the resist layer 7 is etched back by dry etching with oxygen for enabling the upper part of the T-type dummy gate 4 to be exposed. The exposed T-type dummy gate 4 is eliminated by etching using a buffered fluoric acid, an exposed substrate layer 1 is recess-etched, and a gate metal 8 is deposited onto the entire surface. Then, when an unneeded gate metal 8 is eliminated, the gate metal in T-type shape is formed on the recess-etched substrate layer.</p> |
