| 摘要 |
PURPOSE:To form a film having a fixed composition regardless of the consumption of a target by increasing the rate of an element having a smaller mass in the composition distribution of the elements of an alloy target in its depth direction as the depth from the surface increases. CONSTITUTION:In the sputtering target for producing an integrated circuit device consisting of an alloy, the rate of the element having a smaller mass number is increased as the depth from the working surface of the target increases. The composition distribution of the elements is thus formed. When the target is sputtered, the atom of the component element having a smaller mass number in the region distant from the working surface is susceptible to scattering as the sputtering proceeds, and the rate in the film forming composition is decreased. The rate of the small-mass element in the region distant from the working surface is previously increased in this target to compensate the decrease. Consequently, a film having an almost same. composition is formed regardless of the consumption of the target.
|
