| 发明名称 |
REFLECTIVE CONTACT FOR GaN-BASED LEDS |
| 摘要 |
A method for forming a light emitting diode (LED) assembly with a reflective contact and an LED assembly formed by the method is disclosed. In one embodiment, the method includes forming an LED on a surface of a substrate, the LED comprising a light emitting layer disposed between a first layer comprising a compound semiconductive material having a first conductivity type, and a second layer comprising the compound semiconductive material having a second conductivity type, the compound semiconductive material comprising a group III element and a group V element. The method further includes forming an oxidized region extending inwards of a surface of the first layer opposite the second layer. In one embodiment, the oxidized region is formed by oxygen (O2) plasma ashing the surface of the first layer. |
| 申请公布号 |
US2016284957(A1) |
申请公布日期 |
2016.09.29 |
| 申请号 |
US201514665632 |
申请日期 |
2015.03.23 |
| 申请人 |
Toshiba Corporation |
发明人 |
Sato Taisuke |
| 分类号 |
H01L33/62;H01L33/32;H01L33/00;H01L33/10 |
主分类号 |
H01L33/62 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A light emitting diode (LED) assembly comprising:
an LED comprising a light emitting layer disposed between a first layer comprising a group III-V semiconductor material having a first conductivity type and a second layer comprising the group III-V semiconductor material having a second conductivity type, the first layer having an oxidized region extending inwards of a surface of the first layer opposite the second layer; and a first contact disposed on the surface of the first layer opposite the second layer and electrically coupled to the first layer. |
| 地址 |
Tokyo JP |
