| 发明名称 |
HETEROSTRUCTURE GERMANIUM TANDEM JUNCTION SOLAR CELL |
| 摘要 |
A photovoltaic device that includes an upper cell that absorbs a first range of wavelengths of light and a bottom cell that absorbs a second range of wavelengths of light. The bottom cell includes a heterojunction comprising a crystalline germanium containing (Ge) layer. At least one surface of the crystalline germanium (Ge) containing layer is in contact with a silicon (Si) containing layer having a larger band gap than the crystalline (Ge) containing layer. |
| 申请公布号 |
US2016284926(A1) |
申请公布日期 |
2016.09.29 |
| 申请号 |
US201615178701 |
申请日期 |
2016.06.10 |
| 申请人 |
International Business Machines Corporation |
发明人 |
Fogel Keith E.;Hekmatshoartabari Bahman;Sadana Devendra K.;Shahidi Ghavam G.;Shahrjerdi Davood |
| 分类号 |
H01L31/20;H01L31/18 |
主分类号 |
H01L31/20 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method of forming a photovoltaic device comprising:
forming a first cell comprising a crystalline germanium (Ge) containing layer, in which at least one surface of the crystalline germanium (Ge) containing layer is in contact with a silicon (Si) containing layer having a larger band gap than the crystalline germanium (Ge) containing layer; and forming at least a second cell on the first cell, wherein the second cell is positioned so that a light source enters at least the second cell before reaching the first cell. |
| 地址 |
Armonk NY US |
