发明名称 BACK-CONTACT SOLAR CELL SET AND MANUFACTURING METHOD THEREOF
摘要 A back-contact solar cell set includes a semiconductor substrate and a contact set. A back-surface of the semiconductor substrate includes a first cell region, a second cell region and a first outer-isolation region which separates said two cell regions. The first outer-isolation region has a first basin region and a first highland region which is higher than the first basin region. The contact set includes a first connecting electrode which covers the first basin region. The first cell region and the second cell region are electrically connected through the first connecting electrode.
申请公布号 US2016284897(A1) 申请公布日期 2016.09.29
申请号 US201615074811 申请日期 2016.03.18
申请人 MOTECH INDUSTRIES INC. 发明人 LIU Shu-Yen;WEI Chih-Ming;CHUANG Chia-Chih
分类号 H01L31/0224;H01L31/18 主分类号 H01L31/0224
代理机构 代理人
主权项 1. A back-contact solar cell set comprising: a semiconductor substrate; and an electrode set located on a back surface of the semiconductor substrate, wherein the back surface comprises a first cell region, a second cell region and a first outer-isolation region which separates the first cell region and the second cell region, the first cell region comprises a first emitter region, a first back surface field region and a first inner-isolation region which separates the first emitter region and the first back surface field region, the second cell region comprises a second emitter region, a second back surface field region and a second inner-isolation region which separates the second emitter region and the second back surface field region, the electrode set comprises a first connecting electrode, a first emitter electrode directly connected to the first emitter region, a first back field electrode directly connected to the first back surface field region, a second emitter electrode directly connected to the second emitter region, and a second back field electrode directly connected to the second back surface field region, and the first emitter electrode electrically connects to the second back field electrode via the first connecting electrode, and the first connecting electrode covers on a first basin region of the first outer-isolation region, wherein the first basin region is lower than a first highland region of the first outer-isolation region in a vertical direction of the semiconductor substrate.
地址 New Taipei City TW