BURIED SOURCE-DRAIN CONTACT FOR INTEGRATED CIRCUIT TRANSISTOR DEVICES AND METHOD OF MAKING SAME

摘要

An integrated circuit transistor is formed on a substrate. A trench in the substrate is at least partially filled with a metal material to form a source (or drain) contact buried in the substrate. The substrate further includes a source (or drain) region in the substrate which is in electrical connection with the source (or drain) contact. The substrate further includes a channel region adjacent to the source (or drain) region. A gate dielectric is provided on top of the channel region and a gate electrode is provided on top of the gate dielectric. The substrate may be of the silicon on insulator (SOI) or bulk type. The buried source (or drain) contact makes electrical connection to a side of the source (or drain) region using a junction provided at a same level of the substrate as the source (or drain) and channel regions.

主权项

1. A method, comprising:
forming a trench in a substrate; at least partially filing said trench with a metal material form a source contact buried in the substrate but exposing a side wall of the substrate; doping the exposed side wall of the substrate to define a source region adjacent a channel region; providing a gate dielectric on top of the channel region; and forming a gate electrode on the gate dielectric.